3055 transistor

Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features. DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage −. VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc. Excellent Safe Operating Area Pb−Free Packages are Available*. Learn about 2N3055, a general purpose NPN power transistor for switching and amplifier applications. Find out its pin configuration, features, specifications, equivalent and datasheet. See how to use 2N3055 in simple and complex circuits with examples and schematics. The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5] 2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. It is an NPN (negative-positive-negative) transistor with a maximum collector current of 15 amps and a maximum collector-emitter voltage of 60 volts. TIP3055 - Complementary Silicon Power Transistors TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. Features DC Current Gain − hFE = 20−70 @ IC = 4.0 Adc Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating 15 ampere power transistors complementary silicon 60 volts 115 watts 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base ... 3055 Datasheet. Part #: 3055. Datasheet: 111Kb/8P. Manufacturer: Allegro MicroSystems. Description: MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs. 9 Results. Datasheet ... To identify the pinout of the 2N3055 transistor, place it in an invert position (leads pointing outward). Then rotate it to one of the positions shown below: a) The distance of the lower section is less than the upper one- The terminal on the right is the Base. b) The distance of the upper section is less than the lower one- The terminal on the ... About STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland. The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets. Brief Description of TIP3055. The TIP3055 is a widely used NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) known for its use in power amplification and high-power switching applications. It is part of the TIP series of transistors and is commonly employed for driving loads like motors, relays, and other high-current applications. The 2N3055 is an NPN power transistor, that is used in general-purpose applications. It was launched by an American electronics company named “RCA Corporation” at the beginning of 1960 by using the hometaxial power transistor method. In the mid of 1970, it was changed to an epitaxial base and the standard used for the numbering of this ... 2N3055 Datasheet, Pinout, Application Circuits. The 2N3055 is a power bipolar transistor designed to handle high power loads in the range of 100 V, and 15 amps. In this post we comprehensively discuss the pinout function, electrical specification, and application designs for the power transistor 2N3055. If you are an electronic hobbyist, you ...